A Model for Rate-dependent Hysteresis in Piezoceramic Materials Operating at Low Frequencies

This paper addresses the modeling of certain rate-dependent mechanisms which contribute to hysteresis inherent to piezoelectric materials operating at low frequencies. While quasistatic models are suitable for initial material characterization in some applications, the reduction in coercive eld and polarization values which occur as frequencies increase must be accommodated to achieve the full capabilities of the materials. The model employed here quanti es the hysteresis in two steps. In the rst, anhysteretic polarization switching is modeled through the application of Boltzmann principles to balance the electrostatic and thermal energy. Hysteresis is then incorporated through the quanti cation of energy required to translate and bend domain walls pinned at inclusions inherent to the materials. The performance of the model is illustrated through a t to low frequency data (0.1 Hz 1 Hz) from a PZT5A wafer.